Mask for manufacturing semiconductor device and method of manufacture thereof

ABSTRACT

The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chips and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern, or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

This application is a continuation of application Ser. No. 07/730,221, filed on Jul. 15, 1991, now abandoned, which is a continuation of application Ser. No. 07/437,268, filed on Nov. 16, 1989, now U.S. Pat. No. 5,045,417.

BACKGROUND OF THE INVENTION

The present invention relates to a mask for use in photolithography and its manufacturing technique, and particularly to a technique effectively applicable to a mask for use of manufacturing semiconductor integrated circuit device.

In recent years, very fine elements constituting a circuit, very fine wirings and very narrow spaces between the elements and wirings have been developed in semiconductor integrated circuit devices.

However, along with such development of the elements and wirings and of the spaces between elements and wirings, there arises a problem in that the accuracy of mask pattern transfer is lowered when an integrated circuit pattern is transferred onto a wafer by coherent light.

This problem will subsequently be described with reference to FIGS. 24(a)-(d).

When a given integrated circuit pattern formed on a mask 50 shown in FIG. 24(a) is transferred onto a wafer by a method of projection exposure or the like, the phases of lights each transmitted through each of a pair of transmission regions P₁, P₂ having light shield region N therebetween are identical to each other as shown in FIG. 24(b). Consequently, these interferential lights increase their intensities in light shield region N located between the above-mentioned pair of transmission regions P₁, P₂ as shown in FIG. 24(c). As a result, as shown in FIG. 24(d) the contrast of a projected image on a wafer is not only lowered, but also the depth of focus becomes shallow, causing the transfer accuracy of the mask pattern to be considerably lowered.

As a means to counteract these problems, a technique of phase shifting lithography has been developed, whereby the phase of light transmitted through the mask is controlled so as to improve the resolution and contrast of the projected image. The phase shifting lithography technique is disclosed, for example, in Japanese Laid-Open Patent No. 173744/1983 and Japanese Laid-Open Patent No.67514/1987.

In the above-mentioned Japanese Laid-Open Patent No. 173744/1983 there is described the structure of a mask having a light shield region and a pair of transmission regions, wherein a transparent material is arranged at least in either one of the transmission regions sandwiching the light shield region therebetween, allowing a phase difference to be generated between the lights each transmitted through each of transmission regions at the time of exposure and thus these lights being interfered with each other to weaken themselves in the region on a wafer which should primarily be a light shield region.

The function of the light transmitted through such a mask as above will subsequently be described with reference to FIGS. 25(a)-(d).

When a given integrated circuit pattern formed on a mask 51 shown in FIG. 25(a) is transferred onto a wafer by the method of projection exposure or the like, a phase difference of 180° is generated between the phase of light transmitted through a transmission region P₂ having transparent material 52 of a pair of transmission regions P₁, P₂ which have light shield region N sandwiched therebetween and the phase of light transmitted through the normal transmission region P₁ as shown in FIGS. 25(b) and (c). Therefore, the lights transmitted through the pair of transmission regions P₁, P₂ interfere with each other to offset them in light shield region N located between these transmission regions P₁, P₂. Consequently, as shown in FIG. 25(d), the contrast of a projected image on a wafer is improved. Thus, the resolution and depth of focus is improved, resulting in a higher accuracy of pattern transfer of the mask 51.

Also, in the above-mentioned Japanese Laid-Open Patent No.67514/1987, there is described the structure of a mask having a light shield region formed by light shielding film and a transmission region formed by removing the light shielding film, wherein a fine aperture pattern is formed by removing a part of shielding film and at the same time, a phase shifting layer is provided on either one of the transmission region or the aperture pattern, and thus a phase difference is generated between the lights transmitted through the transmission region and the aperture pattern, preventing the distribution of amplitude of light transmitted through the transmission region from being spread in the horizontal direction.

SUMMARY OF THE INVENTION

Nevertheless, the present inventor has found that the conventional technique disclosed in the above-mentioned Japanese Laid-Open Patent No. 173744/1983 has the following problem:

The above-mentioned conventional technique in which a phase difference is generated between the lights transmitted through the pair of transmission regions does not has any problem as far as a pattern is simply and unidimensionally arranged in a repetitive manner. However, in the case that the pattern is complicated as in an actual integrated circuit pattern, the arrangement of the transparent material may be impossible, and a problem arises in that sufficient resolution is not obtained at some sections.

For example, in the case of an integrated circuit pattern 53 shown in FIG. 26. If transparent material is arranged in a transmission region P₂, the resolutions in light shield regions N₁ and N₂ are certainly improved. However, if transparent material is arranged in transmission region P₁ in order to improve the resolution in light shield region N₃, the lights transmitted through transmission regions P₁, P₂ will have an identical phase, causing the resolution in light shield region N₂ to be lowered. Also, in order to improve the resolution in the light shield region N₃, a transparent material should be provided in such a transmission region as the transmission region P₃. Then, the transparent material can be arranged in a part of transmission region P₃. In such a case, however, there appears the reversing of phases in the lights transmitted through the same transmission region P₃, and an unwanted pattern is formed on a wafer. Consequently, it becomes impossible to improve the resolution in light shield region N₃.

Furthermore, if the pattern is complicated like an actual integrated circuit one, the arrangement of transparent material is restricted as mentioned above. This makes it difficult to prepare the pattern data of the transparent material. Conventionally, therefore, the pattern of the transparent material should be produced specially while taking into consideration the above-mentioned restriction on the arrangement when a mask having means for shifting phase of light is manufactured.

On the other hand, the known technique disclosed in Japanese Laid-Open Patent.No. 67514/1987, whereby an aperture pattern is formed in a light shield region so as to generate a phase contrast between the light transmitted through the aperture pattern and the one transmitted through the transmission region, makes it difficult to arrange the aperture pattern, the same as in the case of the above-mentioned publication, if a pattern is as complicated and extremely fine as an actual integrated circuit pattern. For example, should the width of pattern of light shield region become narrower, there arises a problem in that the arrangement of an aperture pattern is difficult.

Furthermore, in this conventional technique, no consideration is given as to the lowering of light intensity at the corners of transmission region which takes place along with a further miniaturization of transmission region required, resulting in a problem posed in that the corners of a projected image are rounded.

The present invention is to solve the above-mentioned problems, and the object thereof is to provide a technique whereby the transfer accuracy of a pattern formed on a mask can be improved.

Another object of the present invention is to provide a technique whereby the manufacturing time of a mask having means for shifting phase of light can be reduced.

Still another object of the present invention is to provide a technique whereby the resolution of not only each side of a projected image but also of each corner thereof can be improved.

Among the inventions to be disclosed in the present application, those typical ones will subsequently be described.

Now, the first invention is a mask having light shield and transmission regions and transferring a given pattern at least by irradiation of coherent light locally, wherein a phase shifting portion is formed in a part of the aforementioned transmission region for shifting a phase of light transmitted, and a phase contrast is generated between the light transmitted through the aforementioned phase shifting portion and the light transmitted through the transmission region where the aforementioned phase shifting portion is not formed, and the aforementioned phase shifting portion is so arranged that the interferential lights of the aforementioned lights can weaken themselves in the boundary area of the aforementioned transmission and light shield regions.

The second invention is the method of manufacturing a mask wherein the pattern data of the phase shifting portion can automatically be prepared in accordance with the pattern data of the light shield region.

The third invention is a mask in which light shield and transmission regions are provided on a mask substrate and a given pattern in the mask is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed, and simultaneously a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a phase shifting groove is formed on the aforementioned mask substrate located below the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region.

The fourth invention is a mask in which light shield and transmission regions are provided on a mask substrate, and a given pattern is transferred at least by the irradiation of coherent light locally, wherein a groove having a depth to reach the main surface of the aforementioned mask substrate is formed in a part of the aforementioned light shield region, and a phase contrast is generated between the light transmitted through the aforementioned groove and the light transmitted through the aforementioned transmission region, and a transparent film is provided above the aforementioned groove so as to allow the interferential lights of the aforementioned lights to weaken themselves at the end portion of the aforementioned light shield region, and simultaneously, subtransmission regions are formed at the corners of the aforementioned transmission region.

According to the first invention mentioned above, the light transmitted through the phase shifting portion and the light transmitted through the portion where it is not formed interfere with each other to weaken themselves at the boundary portion of transmission and light shield regions so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image can be improved considerably, resulting in a remarkable improvement of the resolution and depth of focus.

Particularly, in the present invention, no restriction on the arrangement of phase shifting portion takes place no matter how complicated the pattern is on the mask. Also, there is no difficulty in arranging the phase shifting portion no matter how narrow the width of pattern becomes in the light shield region.

According to the second invention mentioned above, the manufacturing time of a mask having means for shifting the phase of light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.

According to the third invention mentioned above, the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves, making it possible to reduce the bleeding of contour of a projected image and to improve the contrast thereof so that the solution and depth of focus can be improved remarkably.

According to the fourth invention mentioned above, the light intensity at the corner of a transmission region increases by the arrangement of a sub-transmission region thereat so that not only the resolution at each side of a projected image, but also the resolution at the corner thereof can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of the principal part of a mask embodying the present invention,

FIGS. 2(a)-(c) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof,

FIG. 3(a) is a sectional view of the mask shown in FIG. 1 in a state of exposure,

FIGS. 3(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask,

FIG. 4 is a sectional view of the principal part of another mask embodying the present invention,

FIG. 5(a) is a sectional view of the mask shown in FIG. 4 in a state of exposure,

FIGS. 5(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 4,

FIG. 6 is a sectional view of the principal part of another mask embodying the present invention,

FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6,

FIG. 8 illustrates the construction of a focused ion beam system employed in the manufacture of the mask,

FIGS. 9(a) and (b) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof,

FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are prepared,

FIG. 11(a) is a sectional view of the mask shown in FIG. 6 in a state of exposure,

FIGS. 11(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6,

FIG. 12 is a sectional view of the principal part of another mask embodying the present invention,

FIG. 13(a) is a sectional view of the mask shown in FIG. 12 in a state of exposure,

FIGS. 13(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12,

FIG. 14 is a sectional view of the principal part of still another mask embodying the present invention;

FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14,

FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and a sub-transmission region.

FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared,

FIGS. 18(a)-(i) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission region shown in FIG. 16,

FIG. 19(a) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure,

FIGS. 19(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15,

FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention,

FIG. 21 is a top plan view of the principal part of the mask,

FIG. 22(a) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure,

FIGS. 22(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region,

FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention,

FIG. 24(a) is a sectional view of a conventional mask in a state of exposure,

FIGS. 24(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask,

FIG. 25(a) is a sectional view of a conventional mask in a state of exposure,

FIGS. 25(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the conventional mask,

FIG. 26 is a partial top plan view illustrating a part of the conventional mask.

DESCRIPTION OF A PREFERRED EMBODIMENT Embodiment 1

FIG. 1 is a sectional view of the principal part of a mask embodying the present invention, and FIGS. 2(a)-(c) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof, FIG. 3(a) is a sectional view of the mask shown in FIG. 1 in a state of exposure, and FIGS. 3(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask.

Mask 1a shown in FIG. 1 of Embodiment 1 is, for example, a reticle used at a given process in manufacturing a semiconductor integrated circuit device. Also, the original pattern of an integrated circuit, which is, for example, five times its actual dimensions, is formed on the mask 1a of Embodiment 1.

Transparent mask substrate(hereinafter referred to simply as substrate) 2 constituting mask 1a is made of synthetic quartz glass or the like having, for example, a refractive index of 1.47. On the main surface of substrate 2, metal layer 3 of, for example, 500-3,000Å thick is patterned in a given shape.

Metal layer 3 comprises, for example, a Cr film so that it will constitute a light shield region A at the time of exposure. Also, metal layer 3 may be of a laminating construction having chromium oxide laminated on the upper surface of a Cr layer.

Furthermore, the portion where the metal layer 3 has been removed constitutes a transmission region B, and the original pattern of the integrated circuit formed on mask 1a comprises of the light shield region A and the transmission region B.

In mask 1a of Embodiment 1, transparent film 4a formed in a pattern slightly wider than that of the above-mentioned pattern of metal layer 3 is provided on mask 1a in such a manner that its part extends over the contour of metal layer 3 into the transmission region B. Consequently, one transmission region B comprises of the region which is covered by transparent film 4a and the region which is not covered thereby.

Transparent film 4a is formed, for example, with indium oxide (InOx). A material having a sufficiently high transmittance against substrate 2 (at least more than 90% required) as well as an excellent property of adhesiveness to substrate 2 should be selected as a material for transparent film 4a. The width of the excessive portion of transparent film 4a is approximately 0.5 μm, provided that, for example, the width of pattern of transmission region B is approximately 2 μm. Given the thickness of transparent film 4a measured from the main surface of substrate 2 is X₁, the refractive index of transparent film 4a is n₁, and the wavelength of light irradiated at the time of exposure is λ, transparent film 4a is formed to satisfy the relation of X₁ =λ/[2(n₁ -1)]. This relation is maintained in order to generate a phase contrast of 180° at the time of exposure between the light transmitted through transparent film 4a and the one through the normal transmission region B in one transmission region B. For example, if the wavelength λ of light irradiated at the time of exposure is 0.365 μm (i line, e.g., of a Hg lamp) and the refractive index n₁ of transparent film 4a is 1.5, the thickness X₁ of transparent film 4a measured from the main surface of substrate 2 will be approximately 0.37 μm. Although not shown in the drawing, an alignment mark is provided on mask 1a to align its position with that of metal layer 3 when, for example, transparent film 4a is formed.

Next, the method of manufacturing mask 1a of Embodiment 1 will be described with reference to FIGS. 2(a)-(c).

First, the surface of transparent substrate 2 made of synthetic quartz glass or the like is ground, and after it is cleaned, metal layer 3 made of Cr or the like of, for example, approximately 500-3,000Å is formed on its main surface by sputtering or others as shown in FIG. 2(a). Subsequently, on the metal layer 3, photoresist (hereinafter referred to as resist) 5a of, for example, 0.4-0.8 μm will be coated. Then, after resist 5a is prebaked, a given portion of 5a is irradiated with electron beam E by the electron beam exposure method or the like in accordance with the integrated circuit pattern data with the integrated circuit pattern data of a semiconductor integrated circuit device coded and stored in advance in a magnetic tape which is not shown in the drawing. In the integrated circuit pattern data, the position coordinate, shape or others are also stored.

Next, as shown in FIG. 2(b), the exposed portion of resist 5a, for example, is removed by a developing solution. Then, the exposed metal layer 3 is removed by etching with a dry etching method or the like to gain the pattern of a given shape.

Subsequently, resist 5a is removed by an exfoliative agent and substrate 2 is cleaned. Then, after inspection, as shown in FIG. 2(c), the main surface of substrate 2 is covered with transparent film 4a of indium oxide (InOx) or others by a sputtering method or the like. At this juncture, the thickness X₁ of the transparent film measured from the main surface of substrate 2 is, for example, approximately 0.37 μm.

After that, the upper surface of transparent film 4a is coated with resist 5b of, for example, 0.4-0.8 μm and furthermore, on its upper surface, an aluminum antistatic layer 6 of, for example, 0.05 μm thick is formed by a sputtering method or the like.

Subsequently, the pattern formed on transparent film 4a will be transferred to resist 5b by an electron beam exposure system or the like in accordance with the pattern data of transparent film 4a.

The pattern data of transparent film 4a is automatically formed by magnifying or demagnifying the light shield region A or transmission region B of the above-mentioned pattern data of the integrated circuit. In embodiment 1, for example, the pattern data of transparent film 4a is automatically formed by thickening the pattern width of light shield region A by, for example, approximately 0.5-2.0 μm.

Then mask 1a shown in FIG. 1 will be produced through the processes of development, etching of a predetermined portion of transparent film 4a, removal of resist 5b, cleaning, inspection and others.

In order to transfer the pattern of the integrated circuit formed on mask 1a onto a wafer covered with resist by use of the mask 1a thus produced, the following steps will be taken, for example.

Mask 1a and a wafer are set on a projection aligner for demagnification--which is not shown in the drawing--whereby the original pattern of integrated circuit on mask 1a is projected on a wafer after it has been reduced to 1/5 optically, and each time the wafer is sequentially moved step by step, projection and exposure are repeated so that the pattern of the integrated circuit formed on mask 1a can be transferred onto the entire surface of the wafer.

Next, the function of Embodiment 1 will be described with reference to FIGS. 3(a)-(d) .

In mask 1a of Embodiment 1 shown in FIG. 3(a) a phase contrast of 180° is generated between the light transmitted through transparent film 4a and the one through the normal transmission region B (FIGS. 3(b) and (c)) in each of transmission regions B of mask 1a when the original pattern of a given integrated circuit formed on mask 1a is transferred onto a wafer by a projection aligner for demagnification or others.

Here, the lights transmitted through the same transmission region B having reverse phases respectively weaken each other at the boundary area of transmission region A and light shield region B because transparent film 4a is arranged around transmission region B. As a result, the bleeding of a contour of image projected on the wafer is reduced so as to improve the contrast of the projected image considerably. Thus, the resolution and depth of focus will remarkably be improved (FIG. 3(d)). Also, since light intensity is the square of light amplitude, the waveform in a negative side is reversed to a positive side as shown in FIG. 3(d).

In this way, it is possible to attain the following effect according to Embodiment 1:

(1). While lights are being transmitted through each of the transmission regions B at the time of exposure, a phase contrast of 180° is generated between the light transmitted through transparent film 4a and the one through the region which is not covered with transparent film 4a. These lights thus transmitted weaken each other at the boundary area of light shield region A and transmission region B, making it possible to reduce the bleeding of contour of image projected on the wafer. As a result, the contrast of the projected image is considerably improved so that the resolution and depth of focus can be improved remarkably.

(2). Through (1) mentioned above, more tolerance for exposure can be allowed.

(3). Since a phase contrast can be generated within one transmission region B, the arrangement of transparent film 4a is not restricted no matter how complicated the pattern is on mask 1a. Also, the arrangement of transparent film 4a can be made with ease no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1a is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1a can be improved remarkably.

(4). The pattern data of transparent film 4a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of transparent film 4a in a short period of time and also with ease. As a result, a remarkable reduction in time required for the manufacture of a phase shifting mask can be achieved.

Embodiment 2

FIG. 4 is a sectional view of the principal part of another mask embodying the present invention, and FIG. 5 (a) is a sectional view of the mask shown in FIG. 4 in a state of exposure, FIGS. 5(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask in FIG. 4.

In mask 1b of Embodiment 2 shown in FIG. 4, transparent film 4b is arranged in the vicinity of the central part of transmission region B.

In this case, too, transparent film 4b is formed on substrate 2 in such a manner that its thickness X₁ will satisfy the relation of X₁ =λ/[2(n₁ -1)] so as to generate as shown in FIGS. 5(b)-(d) the phase contrast of 180° between the light transmitted through transparent film 4b and the one through the normal transmission region B in each of transmission regions B, B of mask 1b (FIGS. 5(b) and (c)). These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield regions A, A so that the bleeding of contour of the image projected on a wafer can be reduced. As a result, the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably (FIG. 5(d)).

Also, in this case, the pattern data of transparent film 4b can automatically be prepared by thinning by a given dimension the width of a pattern of transmission region B which has been obtained by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one.

According to Embodiment 2, therefore, the same effects as in the aforementioned Embodiment 1 can be attained.

Embodiment 3

FIG. 6 is a sectional view of the principal part of another mask embodying the present invention, FIG. 7 shows top plan views of the principal part of the mask shown in FIG. 6, FIG. 8 illustrates the construction of a focused ion beam system, FIGS. 9(a) and (b) are sectional views illustrating the principal part of the mask in the respective processes of the manufacture thereof, FIG. 10 is a flow chart representing the procedures through which the pattern data for a phase shifting groove are obtainable, FIG. 11(a) is a sectional view of the mask shown in FIG. 6 in a state of exposure, and FIGS. 11(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 6.

The mask of Embodiment 3 will subsequently be described with reference to FIGS. 6 and 7. The crosshatching in FIG. 7 shows the light shield region A.

In mask 1c of Embodiment 3, phase shifting groove 7a is formed on substrate 2 instead of transparent film 4a of aforementioned Embodiment 1 as a means for generating a phase contrast between the lights being transmitted through transmission region B at the time of exposure.

Phase shifting groove 7a is arranged around transmission region B. In other words, phase shifting groove 7a is arranged along the contour of metal layer 3. The width of phase shifting groove 7a is approximately 0.5 μm if the pattern width of transmission region B is given to be, for example, approximately 2.0 μm. Then, phase shifting groove 7a is formed to satisfy the relation of d=λ/[2(n₂ -1)] where d is the depth thereof, n₂ is the refractive index of substrate 2, and λ is the wavelength of light irradiated at the time of exposure. This relation is maintained to generate a phase contrast of 180° between the phase of light transmitted through phase shifting groove 7a and that of light through the normal transmission region B in the lights being transmitted through each of transmission regions B at the time of exposure. For example, in case where the wavelength λ of the light irradiated at the time of exposure is given to be 0.365 μm (i line), the depth d of phase shifting groove 7a can be approximately 0.39 μm. Also, although not shown in the drawing, an alignment mark is provided on mask 1c when, for example, phase shifting groove 7a is formed to align its position with that of metal layer 3.

Next, a focused ion beam system 8 for use in manufacturing mask 1c will be described with reference to FIG. 8.

Inside ion source 9 installed above the system body, such a dissolved liquid metal as gallium (Ga) or the like, for example, is contained, though not shown in the drawing. Below ion source 9, withdrawable electrode 10 is installed, beneath which is provided the first lens electrode 11a and the first aperture electrode 12a formed by static lens. Below aperture electrode 12a, the second lens electrode 11b, the second aperture electrode 12b, blanking electrodes 13 for controlling the on/off of beam irradiation, and then third aperture electrode 12c and deflection electrode 14 are installed.

With the formation of each electrode thus installed, the ion beam emitted from ion source 9 is irradiated under the controls of the above-mentioned blanking electrodes 13 and deflection electrode 14 onto the mask 1c which is held by holder 15 with patterns yet to be formed thereon. Then, metal layer 3 or substrate 2 can be processed by etching with the ion beam by setting at the time of scanning beforehand its irradiation time and scanning numbers per unit of pixel of, for example, 0.02×0.02 μm.

Holder 15 is installed on the sample stand 16 movable in the directions of X and Y, and sample stand 16 can be positioned by sample stand driving motor 19 when its position is recognized by laser interferometer 18 through laser mirror 17 installed at the side of the sample stand. Also, above holder 15, there is installed secondary ion and secondary electron detector 20 so that the secondary ion and secondary electron generated by a workpiece can be detected. Furthermore, electron shawer radiating member 21 is installed above secondary ion and secondary electron detector 20 to prevent a workpiece from being electrified.

The inside of the processing system set forth above has a structure keeping itself under vacuum by vacuum pump 22 shown in the drawing below the above-mentioned sample stand 16. Also, each of the processing systems mentioned above is structurally controlled by each of the control members 23-27 installed outside the system body so that their operations are controlled, and each of the control members 23-27 is also controlled by controlling computer 33 through each of the interface members 28-32. Controlling computer 33 has terminal 34, magnetic disk unit 35 to record data, and MT deck 36.

Next, the method of manufacturing mask 1c of Embodiment 3 will be described with reference to FIG. 8, FIGS. 9(a) and (b) and FIG. 10.

First, as shown in FIG. 9(a), metal layer 3 of, for example, 500-3,000Å is formed by sputtering or the like on the main surface of substrate 2 which has been ground and cleaned. Then, mask 1c is held by holder 15 of focused ion beam system 8.

Next, an ion beam is charged from ion source 9. This ion beam is converged by each of the above-mentioned electrodes into a beam diameter of, for example, 0.5 μm. Then, an ion beam current of approximately 1.5 μA is obtained. Subsequently, this focused ion beam is irradiated onto a given portion of metal layer 3 in accordance with the pattern data of an integrated circuit pattern stored beforehand in a magnetic tape of MT deck 36. Then, metal layer 3 is etched. At this juncture, the irradiation time per pixel is, for example, 3×10⁻⁶ second, and the scanning numbers are approximately 30. Thus, as shown in FIG. 9(b), metal layer 3 is patterned. The patterning of metal layer 3 may also be carried out by an electron beam exposure method or the like as in the aforementioned Embodiment 1.

After this, a given quantity of ion beam is irradiated onto the alignment mark provided on mask 1c, which is not shown in the drawing, so as to detect a generated secondary electron by secondary ion secondary electron detector 20, and the position coordinates are computed in accordance with the detection data.

Then, based on the position coordinates of the alignment mark thus worked out, sample stand 16 is moved so that the ion beam can be irradiated onto the location where phase shifting groove 7a is formed.

Next, in accordance with the pattern data of phase shifting groove 7a, the ion beam is irradiated onto substrate 2, which has been exposed by the pattern formation of metal layer 3, along the contour of metal layer to form phase shifting groove 7a (FIG. 6). At this juncture, the depth, width and others of phase shifting groove 7a can be defined by the focused ion beam accurately with ease.

The pattern data of phase shifting groove 7a is prepared by a logic arithmetic operation on the pattern data of light shield region A (or transmission region B) and the pattern data obtainable by magnifying or demagnifying the pattern data of light shield region A (or transmission region B).

For example, as shown in FIG. 10, the pattern data of an integrated circuit is first prepared through the process of LSI circuit design (step 101a), CAD design data (101b), and Boolean OR (101c), and then the data is produced by the sizing process (102) for the patterned data having the pattern width of light shield region A which has been thickened only by a given dimension. At the same time, the data for pattern data of transmission region B are prepared in the process of reverse tone (103) by reversing the positive pattern data of an integrated circuit pattern into the negative one. Then, the pattern data of phase shifting groove 7a are automatically prepared (105) by executing AND of these pattern data (104).

Next, after phase shifting groove 7a has been formed, the bottom face of phase shifting groove 7a formed on mask 1c is flattened by dry etching with a gas plasma of, for example, Freon (CF₄) or the like. With this flattening of the bottom face of phase shifting groove 7a, the operativity of phase of the light being transmitted through this groove can be improved. In this respect, when the dry etching treatment is carried out, a gas of Freon or the like is supplied for 20 scc/min to the inside of a treatment chamber of plasma dry etching, the pressure of which is reduced, for example, to 0.1 Torr.

In this way, mask 1c shown in FIGS. 6 and 7 is manufactured.

Next, the function of mask 1c of Embodiment 3 will be described with reference to FIGS. 11(a)-(d).

Now, when the original of a given integrated circuit pattern on mask 1c shown in FIG. 11(a) is transferred by a method of demagnifying projection exposure or the like, a phase contrast of 180° is generated (FIGS. 11(b) and (c)) between the light being transmitted through phase shifting groove 7a and the one through the normal transmission region B in each of transmission regions B of mask 1c.

Here, the lights transmitted through the same transmission region B having a reverse phase respectively weaken each other at the boundary area of transmission region B and light shield region A because phase shifting groove 7a is arranged around transmission region B on mask 1c. As a result, the bleeding of the contour of the projected image on a wafer can be reduced, and the contrast of a projected image and depth of focus can be improved remarkably (FIG. 11(d)). Also, since the light intensity is the square of the light amplitude, the waveform in the negative side of the light amplitude on a wafer will be reversed into the positive side as shown in FIG. 11(d).

Thus, the following effects can be attained according to Embodiment 3:

(1). While lights are being transmitted through each of the transmission regions B at the time of exposure, a phase contrast of 180° is generated between the light transmitted through phase shifting groove 7a and the one through the normal transmission region B. These lights thus transmitted weaken each other at the boundary area of light shield region A and transmission region B, making it possible to reduce the bleeding of contour of the image projected on a wafer. As a result, the contrast of projected image is considerably improved so that the resolution and depth of focus can be improved remarkably.

(2). Through (1) mentioned above, more tolerance for exposure can be allowed.

(3). Since a phase contrast can be generated within one transmission region B, the arrangement of phase shifting groove 7a is not restricted. Also, the arrangement of phase shifting groove 7a is not difficult no matter how narrow the pattern width is in light shield region A. Consequently, the pattern transfer accuracy will never be lowered locally even when a pattern formed on mask 1c is highly complicated and fine like the pattern of an integrated circuit so that the pattern transfer accuracy of the entire pattern formed on mask 1c can be improved remarkably.

(4). The pattern data of phase shifting groove 7a can be obtained automatically based on the pattern data of light shield region A or transmission region B, making it possible to prepare the pattern data of phase shifting groove 7a with ease and reduce its preparation time considerably.

(5). Since a means for shifting the phase of light can be the phase shifting groove 7a instead of the transparent film as in the aforementioned Embodiments 1 and 2, the process of forming a transparent film is no longer needed when mask 1c is manufactured.

(6) In addition to the above-mentioned (4) and (5), the phase shifting groove 7a can also be formed when the patterning of metal layer 3 is carried out by focused ion beam, so that the mask manufacturing process can be simplified as compared with the one using a transparent film as the means of shifting phase, and its manufacturing time can be reduced considerably.

(7). Since the manufacturing process of phase shifting mask can be simplified, exterior defects, adhesion of foreign materials, or any others are prevented effectively as compared with the mask using transparent film as means for shifting phase of light.

(8). In case of using phase shifting groove 7a, there is no deterioration of, for example, the quality of film, transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the mask manufactured as in the case of using a transparent film for phase shifting.

(9). Through (8) mentioned above, the life of a mask can be prolonged as compared with the mask using the transparent film as the means for shifting the phase of light.

(10). Through (8) mentioned above, the accuracy of phase operation of light can be maintained longer than the mask using the transparent film as the means for shifting the phase of light.

(11). In the case of phase shifting groove 7a, there is no need of consideration for any deterioration of the quality of film and others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, such treatment as ozone sulfuric acid cleaning at a high-temperature or high pressure water scribble cleaning or others can be conducted for mask 1c.

(12). Through (11) mentioned above, a removal treatment of foreign materials can be conducted better than the mask using a transparent film as the means for shifting the phase of light.

Embodiment 4

FIG. 12 is a sectional view of the principal part of another mask embodying the present invention, FIG. 13 (a) is a sectional view of the mask shown in FIG. 12 in a state of exposure, and FIGS. 13(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIG. 12.

In mask 1d of Embodiment 4 shown in FIG. 12, phase shifting groove 7b is arranged in the vicinity of the central part of transmission region B.

In this case, too, phase shifting groove 7b is formed on substrate 2 in such a manner that its depth d will satisfy the relation of d=λ/[2(n₂ -1)] so as to generate as shown in FIGS. 13(a)-(d) the phase contrast of 180° between the light transmitted through phase shifting groove 7b and the one through the normal transmission region B in each of transmission regions B, B of mask 1d (FIGS. 13(b) and (c)). These lights thus transmitted will weaken each other at the boundary area of transmission region B and adjacent light shield region A, A so that the bleeding of contour of the image projected on a wafer can be reduced. As a result, the contrast of a projected image can be considerably improved, making it possible to improve the resolution and depth of focus remarkably (FIG. 13(d)).

Also, in this case, the pattern data of phase shifting groove 7b can automatically prepared by thinning by a given dimension, the width of a pattern of transmission region B obtainable by reversing the positive pattern data of, for example, an integrated circuit pattern to the negative one.

According to Embodiment 4, therefore, the same effect as in the aforementioned Embodiment 3 can be attained.

Embodiment 5

FIG. 14 s a sectional view of the principal part of still another mask embodying the present invention, FIG. 15 is a top plan view of the principal part of the mask shown in FIG. 14, FIG. 16 is a top plan view of the principal part of a mask showing an example of pattern data for a groove and sub-transmission region, FIG. 17 is a flow chart representing the procedures through which the pattern data for the groove and sub-transmission region shown in FIG. 16 are prepared, FIGS. 18(a)-(i) are illustrations showing the shapes of the pattern in the course of forming the pattern for the groove and sub-transmission in FIG. 16, FIG. 19(a) is a sectional view of the mask shown in FIGS. 14 and 15 in a state of exposure, and FIGS. 19(b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region of the mask shown in FIGS. 14 and 15.

The mask 1e of Embodiment 5 will subsequently be described with reference to FIGS. 14 and 15.

In mask 1e of Embodiment 5, a plurality of grooves 37 which extend respectively from the top surface of metal layer 3 to the main surface of substrate 2 are arranged on the metal layer comprising light shield region A.

Groove 37 is, as shown in FIG. 15, is arranged in parallel along each side of transmission region B in such manner that it surrounds each of rectangular transmission regions B, B. The width of groove 37 is, for example, approximately 0.5 μm.

Above groove 37, there is provided transparent film 4c made of indium oxide (InOx) or the like having, for example, a refractive index of 1.5.

With transparent film 4c, mask 1e is so constructed that it generates a phase contrast between the light transmitted through transparent film 4c and groove 37 and the one through transmission region B at the time of exposure.

Given the thickness of transparent film 4c measured from the main surface of substrate 2 is X₂, transparent film 4c is formed, as in the aforementioned Embodiment 1, to satisfy the relation of X₂ =μ/[2(n₁ -1)]. This relation is maintained in order to generate a phase contrast of 180° between the phase of light transmitted through transparent film 4c and groove 37 and the phase of one through transmission region B in the lights irradiated onto mask 1c at the time of exposure. For example, in case where the wavelength of light λ irradiated at the time of exposure is 0.365 μm (i line), the thickness X₂ of transparent film 4c measured from the main surface of substrate 2 can be approximately 0.37 μm.

Furthermore, in Embodiment 5, as shown in FIG. 15 rectangular sub-transmission region C of, for example, approximately 0.5×0.5 μm in dimension is arranged at each of four corners of rectangular transmission region B. This is provided in order to prevent the four corners of a pattern of an integrated circuit formed at the right angles on a mask le from being rounded after its development as the miniaturization of an integrated circuit pattern further advances. In other words, sub-transmission regions C are arranged respectively at each of the four corners in an integrated circuit pattern in order to increase the light intensity in the vicinity of the four corners, where the light intensity tends to be most weakened resulting in a greater distortion, so that a projected image can be compensated. Also, although not shown in the drawing, when, for example, groove 37 or transparent film 4c is formed, an alignment mark is provided on mask 1c to align their position and that of metal layer 3.

To manufacture such a mask as mask 1e, the subsequent procedures will be taken, for example.

First, on the main surface of substrate 2 which has been ground, metal layer 3 of, for example, approximately 500-3,000Å is formed by sputtering or others. Subsequently, this substrate is held on holder 15 of focused ion beam system 8 described in the aforementioned Embodiment 3.

Next, metal layer 3 on the main surface of substrate 2 is patterned by focused ion beam in accordance with the data of an integrated circuit pattern stored beforehand in the magnetic tape of MT deck 36.

Likewise, after this, groove 37 is formed on metal layer 3 by irradiating the focused ion beam onto metal layer 3 on the main surface of substrate 2 in accordance with the pattern data of groove 37 and sub-transmission region q stored beforehand in the magnetic tape of MT deck 36.

The pattern data of groove 37 and sub-transmission region C, as will be described later, can automatically be prepared by providing an arrangement rule against rectangular transmission region B.

Then, the pattern data of transparent film 4c is prepared in accordance with the pattern data of an integrated circuit pattern and those of groove 37 and sub-transmission region C. Based on this, transparent film 4c is formed on mask 1c in the same manner as in the aforementioned Embodiment 1.

Here, the method of preparing the pattern data of groove 37 and sub-transmission region C formed on an integrated circuit pattern shown in FIG. 16 as an example will be described along the flow chart shown in FIG. 17 with reference to FIGS. 18(a)-(i). To facilitate examining the drawings, however, transparent film 4c is not shown in FIG. 16. Also, crosshatchings in FIGS. 18(a)-(i) represent the patterns produced in each process respectively.

First, the data of pattern 38 in transmission region B as shown in FIG. 18(a) are prepared (steps 101a-101c) through the processes of LSI circuit design, CAD design, and Boolean OR.

Subsequently, as shown in FIG. 18(b), pattern 39 is defined (102a) by thickening the pattern width of transmission region B by, for example, approximately 2.0 μm through the process of sizing 1.

At the same time, through the process of sizing 2, pattern 40 is produced (102b) by thickening the pattern width of transmission region B by, for example, 1.0 μm as shown in FIG. 18(c).

Next, through the process of corner clipping, the data of pattern 41 having only the corners extracted from pattern 39 are prepared a shown in FIG. 18(d) (103a). Then, through the process of reversing tones, the data of pattern 41 thus prepared are reversed from positive to negative in order to prepare the data of pattern 42 as shown in FIG. 18(e) (104a).

Furthermore, on the other hand, through the process of reversing tones, pattern 40 produced in the above-mentioned process of sizing 2 is reversed form positive to negative, and the data of pattern 43 shown in FIG. 18(f) are prepared (103b).

Then, the data of pattern 44 for groove 37 as shown in FIG. 18(g) are prepared (105a and 106a) by executing AND of the data of patterns 39, 42, and 43 shown respectively in FIGS. 18(b), (e) and (f).

Meanwhile, the data of pattern 45 shown in FIG. 18(h) are prepared (104b) by executing AND of the data of pattern 40 shown in FIG. 18(c) and those of pattern 41 shown in FIG. 18(d).

Subsequently, the area b of pattern 45 thus produced is judged to see if it is smaller than 1/2 of the area a of pattern 41 (105b). Through this judgment, those patterns, the area b of which are smaller than 1/2 of the area a are selected, and the data of pattern 46 of sub-transmission region C shown in FIG. 18(i) are prepared (106b). The reason why the area of pattern 45 is compared with a given value is that sub-transmission C region should necessarily be added only to the corner section having shape of pattern 38 in transmission region B.

Next, the function of Embodiment 5 will be described with reference to FIGS. 19(a)-(d).

When the original of a given integrated circuit pattern on mask 1c shown in FIG. 19(a) is transferred onto a wafer by the method of demagnifying exposure or the like, a phase contrast of 180° is generated between the light transmitted through transparent film 4c and groove 37 and the one through transmission region B (FIGS. 19(b) and (c)) in each of transmission regions B in mask 1c.

Here, the light transmitted through transparent film 4c and groove 37 and the one through transmission region B weaken each other at the end portion of light shield regions A, A adjacent to transmission region B. Therefore, the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably, so that the resolution and depth of focus can be improved remarkably. Now, since the light amplitude is the square of the light intensity, the waveform in the negative side of light amplitude on a wafer is reversed to the positive side as shown in FIG. 19(d).

In this way, the following effects can be attained according to Embodiment 5:

(1). While lights are being irradiated onto mask le at the time of ,exposure, a phase contrast of 180° is generated between the light transmitted through transparent film 4c and groove 37 and the one through transmission region B. These lights are made to weaken themselves each other at the end portion of light shield region A, making it possible to reduce the bleeding of contour of the image projected on a wafer. As a result, the contrast of the projected image can be improved considerably so that the resolution and depth of focus can be improved remarkably.

(2). Through (1) mentioned above, more tolerance for exposure can be allowed.

(3). Through (1) mentioned above, the accuracy of pattern transfer can be improved.

(4). The accuracy of pattern transfer can be improved more by providing sub-transmission region C at each of four corners of transmission region B because its provision allows the light intensity of the projected image there to be further intensified.

(5). The time required for manufacturing a phase shifting mask can considerably be reduced as compared with the previous one by automatically producing the patterns of groove 37 and transparent film 4c.

Embodiment 6

FIG. 20 is a sectional view of the principal part of still another mask embodying the present invention, FIG. 21 is a top plan view of the principal part of the mask, FIG. 22 (a) is a sectional view of the mask shown in FIGS. 20 and 21 in a state of exposure, and FIGS. 22 (b)-(d) are diagrams representing the amplitude and intensity of the light being transmitted through the transmission region.

Mask if of Embodiment 6 will subsequently be described with reference to FIGS. 20 and 21.

In mask if of Embodiment 6, phase shifting groove 7c is formed on substrate 2 located below groove 37 instead of transparent film 4c of the aforementioned Embodiment 5 as means for generating a phase contrast between the light transmitted through groove 37 and the one through transmission region B.

Given the depth of phase shifting groove 7c is d, the refractive index of substrate 2 is n₂, and the wavelength of exposure light is λ, the phase shifting groove 7c is formed to maintain the relation of d=λ/[2(n₂ -1)] as in the aforementioned Embodiment 3.

For example, in case where the wavelength of light λ is 0.365 μm (i line) the dpeth d of phase shifting groove 7b can be approximately 0.39 μm.

The bottom face of phase shifting groove 7c is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of light transmitted through the end face thereof. Phase shifting groove 7c is produced by etching substrate 2 to the depth d by increasing the scanning numbers of focused ion beam when, for example, groove 37 is formed.

Also, in Embodiment 6 as in the aforementioned Embodiment 5, rectangular sub-transmission region C of for example approximately 0.5×0.5 μm is arranged at each of the four corners of rectangular transmission region B as shown FIG. 21. Furthermore, although not shown in the drawing, the alignment mark is provided on mask 1f in order to align its position with that of metal layer 3 when, for example, groove 37 or sub-transmission region C is formed.

The pattern data of groove 37 and sub-transmission region C are prepared in the same way as, for example, in the aforementioned Embodiment 5. Also, in this case, the pattern data of phase shifting groove 7c are identical to those of groove 37.

Next, the function of Embodiment 6 will be described with reference to FIGS. 22 (a)-(d).

When the original of a given integrated circuit pattern on mask 1f shown in FIG. 22(a) is transferred onto a wafer by the method of demagnifying exposure light or the like, a phase contrast of 180° is generated between the light transmitted through groove 37 and phase shifting groove 7c and the one through transmission region B (FIGS. 13(b) and (c)).

Here, the light transmitted through groove 37 and phase shifting groove 7c and the one through transmission region B in the lights irradiated onto mask 1f weaken themselves each other at the end portion of light shield regions A, A adjacent to transmission region B. As a result, the bleeding of contour of the image projected on a wafer can be reduced to improve the contrast of the projected image considerably so that the resolution and depth of focus can be improved remarkably (FIG. 22(d)). Also, since the light intensity is the square of the light amplitude, the waveform in the negative side of the light amplitude on a wafer is reversed to the positive side as shown in FIG. 22(d).

As set forth above, in Embodiment 6, the following effects can be attained in addition to the effects (1)-(5) of the aforementioned Embodiment 5:

(1). There is no need for the process of forming any transparent film for use in phase shifting, when mask 1f is manufactured, because phase shifting groove 7c is employed instead of transparent film 4c as means for shifting phase of light.

(2). In addition to (1) mentioned above, phase shifting groove 7c can be produced when groove 37 is formed on metal layer 3 by focused ion beam, whereby the process of manufacturing the phase shifting mask can be simplified as compared with mask 1e as in the aforementioned Embodiment 5, and the time required for its manufacture can be reduced remarkably.

(3). The manufacturing process of the phase shifting mask can be so simplified that external defect, adhesion of foreign materials, or any other causes of damage will be prevented remarkably as compared with mask le of the aforementioned Embodiment 5.

(4). In case of phase shifting groove 7c, there is no deterioration of, for example, the quality of film, the transmission rate, or adhesiveness to substrate 2 due to irradiation light or exposure light after the manufacture of the mask as in the case of a transparent film for use in phase shifting.

(5). Through (4) mentioned above, the life of the mask can be prolonged more than the one using a transparent film as the means for shifting phase of light.

(6). Through (4) mentioned above, the accuracy of light phase operation can be maintained longer than with the mask using a transparent film as the means for shifting phase of light.

(7). In case of phase shifting groove 7c, there is no need for such consideration as required for deterioration of the quality of film, transmission rate, or adhesiveness, and the removal of film or others as in the case of using a transparent film as the means for shifting the phase of light. Consequently, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other treatment can be conducted against mask if at a high-temperature.

(8). Through (7) mentioned above, the removal treatment of foreign materials can be conducted better than with the mask using the transparent film as the means for shifting phase of light.

Embodiment 7

FIG. 23 is a sectional view of the principal part of still another mask embodying the present invention.

In mask 1g of Embodiment 7 shown in FIG. 23, phase shifting groove 7d is produced at least on either one of a pair of transmission regions B, B having light shield region A therebetween.

The bottom face of phase shifting groove 7d is almost flattened by a plasma dry etching treatment as in the aforementioned Embodiment 3 in order to improve the operativity of phase of light transmitted through it.

Embodiment 7 is applicable to the portion where an integrated circuit pattern is simply arranged as in the case of, for example, a memory cell.

Phase shifting groove 7d is produced by etching substrate 2 to the depth d by increasing beam scanning numbers when, for example, transmission region B is formed as in the aforementioned Embodiment 6, by etching metal layer 3 with a focused ion beam.

As set forth above, the following effects can be attained according to Embodiment 7:

(1). At the time of exposure, the phase contrast of 180° is generated between the lights each transmitted through each of transmission regions B of the pair of transmission regions B, B having light shield region A therebetween so that the lights each transmitted through each of transmission regions B having shield region A therebetween can weaken each other in light shield region A. Consequently, the resolution of an image in light shield region located between-the pair of transmission regions B can be improved, making it possible to improve the accuracy of pattern transfer.

(2). There is no need for the process of forming transparent film in the manufacture of mask 1g because of phase shifting groove 7d being employed as the means of shifting the phase of light instead of the conventional transparent film.

(3). In addition to (2) mentioned above, the manufacturing process of the phase shifting mask can be simplified as compared to manufacture of the conventional one, and its manufacturing time can also be reduced considerably by producing phase shifting groove 7d simultaneously with the patterning of metal layer 3 by focused ion beam.

(4). Since the manufacturing process of the phase shifting mask is simplified, external defect, adhesion of foreign materials or any other causes of damage can be prevented remarkably.

(5). In case of phase shifting groove 7d, there is no deteriorations of, for example, the quality of film, transmission rate, or adhesiveness by irradiation light or exposure light after the manufacture of the mask, as in the case of using a transparent film for conventional phase shifting.

(6). Through (5) mentioned above, the life of the mask having a means for shifting the phase of light can be prolonged more than the convention one.

(7). Through (5) mentioned above, the accuracy for light phase operation can be maintained longer than the conventional one.

(8). Since phase shifting groove 7d does not require any consideration for deteriorations of the quality of film, transmission rate or adhesiveness and the removal of film or others, ozone sulfuric acid cleaning or high pressure water scrabble cleaning or other cleaning treatment can be conducted against mask 1g at a high-temperature.

(9). Through (8) mentioned above, removal of foreign materials can be conducted better than with the mask using a transparent film.

As set forth above, the invention of the present inventor has been specifically described in accordance with embodiments. The present invention, however, is not limited to the aforementioned embodiments, and it is needless to say that modifications and variations are possible without departing from the spirit and scope of the present invention.

For example, in the aforementioned embodiment 3, there is described the case where the pattern data of the phase shifting groove is prepared by executing AND of the pattern data obtainable by magnifying the pattern of the light shield region and the pattern data of the transmission region. It is not limited to this case, and various modifications are possible. For example, it can be obtained by deducting the original pattern of the light shield region from the pattern formed by magnifying the pattern of the light shield region.

Also, in the aforementioned embodiments 1, 2, and 5, there is described the case where the transparent film employed is of indium oxide. The case is not limited to the application thereof. For example, silicon dioxide, silicon nitride, magnesium fluoride or polymethyl methacrylate or the like can be applied.

The descriptions set forth above have been made chiefly as to the application of the invention by the present inventor to the mask used in the process of manufacturing semiconductor integrated circuit devices which is the industrial field defining the background of the invention. The present invention, however, is not limited to such an application only. It may be applicable to various technical fields where a transfer of a given pattern to a given substrate is required.

The typical effects obtainable by the invention disclosed in the present application will subsequently be described briefly.

According to the first invention, the light transmitted through the transparent film or phase shifting groove and the light transmitted through the portion where these are not provided interfere with each other at the boundary area of transmission and light shield regions so as to weaken themselves in each of transmission regions at the time of exposure. Thus, the bleeding of contour of an image projected on a wafer can be reduced so that the contrast of the projected image is improved considerably resulting in a remarkable improvement of the resolution and depth of focus. Especially, in this case, the phase contrast is generated within the lights being transmitted through one transmission region. Therefore, there is no restriction imposed upon the arrangement of transparent film no matter how complicated the pattern is on the mask. Also, the arrangement of transparent film can be made without difficulty no matter how narrow the pattern width is in the transmission region. As a result, the accuracy of pattern transfer will not be lowered locally, making it possible to improve remarkably the transfer accuracy of the entire pattern formed on the mask.

According to the second invention, the manufacturing time of the mask having a means for shifting the phase of light can be reduced considerably because there is no need for preparing specially any pattern data of transparent film or phase shifting groove.

According to the third invention, the light transmitted through the transmission region and the light transmitted through the groove and phase shifting groove interfere with each other to weaken themselves at the end portion of the transmission region so that the bleeding of contour of an image projected on a wafer can be reduced, and the contrast of the projected image will be improved considerably, making it possible to improve the resolution and depth of focus remarkably. As a result, the accuray of pattern transfer can be improved.

According to the fourth invention, the light intensity at the corners of the transmission region is increased by arranging sub-transmission regions at the corners of the transmission region so that not only the resolution of the projected image at each side but also the resolution of the corners thereof can be improved. 

What is claimed is:
 1. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 2. A semiconductor device projection exposure method according to claim 1, wherein a width of the phase reversing region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 3. A semiconductor device projection exposure method according to claim 2, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
 4. A semiconductor device projection exposure method according to claim 1, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
 5. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light relative to the phase non-reversing and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, a width of the phase reversing region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase non-reversing region and the phase reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 6. A semiconductor device projection exposure method according to claim 5, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
 7. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising;exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 8. A semiconductor device projection exposure method according to claim 7, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 9. A semiconductor device projection exposure method according to claim 7, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 10. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 11. A semiconductor device projection exposure method according to claim 10, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 12. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 13. A semiconductor device projection exposure method according to claim 12, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 14. A semiconductor device projection exposure method according to claim 12, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 15. A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
 16. A semiconductor device projection exposure method according to claim 15, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 17. A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
 18. A semiconductor device reduction projection exposure method according to claim 17, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 19. A semiconductor device projection exposure method according to claim 18, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 20. A semiconductor device reduction projection exposure method according to claim 19, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 21. A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
 22. A semiconductor device reduction projection exposure method according to claim 21, wherein a width of the phase reversing region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 23. A semiconductor device projection exposure method according to claim 22, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
 24. A semiconductor device reduction projection exposure method according to claim 21, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
 25. An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby to transfer the circuit pattern on the mask substrate onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising:(a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, wherein the mask has a first phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 26. An optical mask according to claim 25, wherein the first phase-shifting means includes a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
 27. An optical mask according to claim 26, wherein the transparent film is formed directly on the first major surface of the mask substrate.
 28. An optical mask according to claim 27, wherein the first major surface of the mask substrate is exposed over the entire surface of the other of the first principal transmission region and the first auxiliary transmission region, on which the transparent film is not disposed.
 29. An optical mask according to claim 28, further comprising a metal film formed on the first major surface of the mask substrate on the entire surface of the first light shield region, for shielding the exposure light beam.
 30. An optical mask according to claim 29, wherein the metal film is formed directly on the first major surface of the mask substrate.
 31. An optical mask according to claim 26, wherein the transparent film is disposed on the first principal light transmission region.
 32. An optical mask according to claim 31, the circuit pattern further comprising:(d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first principal light transmission region and the first light shield region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a transparent film on the entire surface of the second principal light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 33. An optical mask according to claim 32, wherein the transparent films on the first and second principal light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 34. An optical mask according to claim 33, wherein the transparent films on the first and second principal light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 35. An optical mask according to claim 32, wherein the transparent films on the first and second principal light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 36. An optical mask according to claim 31, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 37. An optical mask according to claim 36, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 38. An optical mask according to claim 31, the circuit pattern further comprising:(d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, by the first phase-shifting means, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so s not to form an independent bright real image thereof on the photoresist film.
 39. An optical mask according to claim 38, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 40. An optical mask according to claim 38, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 41. An optical mask according to claim 39, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 42. An optical mask according to claim 26, wherein the transparent film is disposed on the first auxiliary light transmission region.
 43. An optical mask according to claim 42, the circuit pattern further comprising:(d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein the mask has a third phase-shifting means for substantially reversing the phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the third phase-shifting means includes a transparent film on the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real time thereof on the photoresist film.
 44. An optical mask according to claim 43, wherein the transparent films on the first and second auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 45. An optical mask according to claim 44, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 46. An optical mask according to claim 43, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 47. An optical mask according to claim 42, the circuit pattern further comprising:(d) a second principal light transmission region, disposed on a side of the first light shield region opposite a side thereof on which the first principal light transmission region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a transparent film on the entire surface of the third auxiliary light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 48. An optical mask according to claim 47, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 49. An optical mask according to claim 48, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 50. An optical mask according to claim 42, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 51. An optical mask according to claim 50, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 52. An optical mask according to claim 25, wherein the first phase-shifting means includes a recess in an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region, a bottom surface of the recess being recessed from a top surface of the other of the first principal light transmission region and the first auxiliary light transmission region toward the second major surface of the mask substrate.
 53. An optical mask according to claim 52, wherein the recess is formed directly in the first major surface of the mask substrate.
 54. An optical mask according to claim 52, wherein the recess is disposed in the first principal light transmission region.
 55. An optical mask according to claim 54, the circuit pattern further comprising:(d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, by the first phase-shifting means, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
 56. An optical mask according to claim 55, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 57. An optical mask according to claim 54, the circuit pattern further comprising:(d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a recess in the entire surface of the second principal light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 58. An optical mask according to claim 57, wherein the recesses disposed in the first and second principal light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 59. An optical mask according to claim 54, wherein the recess disposed in the first principal light transmission region has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 60. An optical mask according to claim 52, wherein the recess is disposed in the first auxiliary light transmission region.
 61. An optical mask according to claim 60, the circuit pattern further comprising:(d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and the first principal light transmission regions corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein the mask has a third phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the third phase-shifting means includes a recess in the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 62. An optical mask according to claim 61, wherein the recesses in the first and second auxiliary light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 63. An optical mask according to claim 60, the circuit pattern further comprising:(d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and the first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a recess in the entire surface of the third auxiliary light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
 64. An optical mask according to claim 63, wherein the recesses in the first and third auxiliary light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 65. An optical mask according to claim 60, wherein the recess in the first auxiliary light transmission region has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 66. An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern of the mask onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising:(a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, wherein the mask has a phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region, as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 67. An optical mask according to claim 66, wherein the phase-shifting means includes a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
 68. An optical mask according to claim 67, wherein the transparent film is formed directly on the first major surface of the mask substrate.
 69. An optical mask according to claim 68, wherein the first major surface of the mask substrate is exposed over the entire surface of the other of the first principal light transmission region and the first auxiliary light transmission region, not having the transparent film thereon.
 70. An optical mask according to claim 67, wherein the transparent film is disposed on the first principal light transmission region.
 71. An optical mask according to claim 70, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 72. An optical mask according to claim 71, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 73. An optical mask according to claim 67, wherein the transparent film is disposed on the first auxiliary light transmission region.
 74. An optical mask according to claim 73, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 75. An optical mask according to claim 74, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 76. An optical mask according to claim 66, wherein the phase-shifting means includes a recess in an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region, a bottom surface of the recess being recessed from a top surface of the other of the first principal light transmission region and the first auxiliary light transmission region, not having the recess therein, toward the second major surface of the mask substrate.
 77. An optical mask according to claim 76, wherein the recess is formed directly in the first major surface of the mask substrate.
 78. An optical mask according to claim 76, wherein the recess is disposed in the first principal light transmission region.
 79. An optical mask according to claim 78, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 80. An optical mask according to claim 76, wherein the recess is disposed in the first auxiliary light transmission region.
 81. An optical mask according to claim 80, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 82. An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising:(a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 83. An optical mask according to claim 82, wherein said means is a transparent film on the entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
 84. An optical mask according to claim 83, wherein the transparent film is disposed on the first auxiliary light transmission region.
 85. An optical mask according to claim 84, the circuit pattern further comprising:(d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof on which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, the mask including another means such that a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the another means is a transparent film on the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 86. An optical mask according to claim 85, wherein the transparent films are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 87. An optical mask according to claim 85, wherein the transparent films have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 88. An optical mask according to claim 84, the circuit pattern further comprising:(d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and the first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, the mask further including another means such that a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein a transparent film is disposed on an entire surface of the third auxiliary light transmission region, to provide said another means, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
 89. An optical mask according to claim 88, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 90. An optical mask according to claim 88, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 91. An optical mask according to claim 83, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 92. An optical mask according to claim 91, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 93. An optical mask according to claim 85, wherein the first and second light shield regions constitute a single light shield region surrounding the first principal light transmission region, and the first and second auxiliary light transmission regions constitute a single loop-shaped region extending along an entire inner contour of the single light shield region.
 94. An optical mask according to claim 93, wherein the transparent films on the first and second auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 95. An optical mask according to claim 93, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 96. An optical mask according to claim 88, wherein the first and second principal light transmission regions constitute a single principal light transmission region surrounding the first light shield region, and the first and third auxiliary light transmission regions constitute a single loop-shaped region extending along an entire outer contour of the first light shield region.
 97. An optical mask according to claim 96, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 98. An optical mask according to claim 97, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 99. An optical mask according to claim 96, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
 100. An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising:(a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
 101. An optical mask according to claim 100, wherein said means is a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
 102. An optical mask according to claim 101, wherein the transparent film is disposed on the first auxiliary light transmission region.
 103. An optical mask according to claim 102, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
 104. An optical mask according to claim 103, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 105. An optical mask according to claim 102, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
 106. A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a major surface of a transparent substrate of a mask, onto a semiconductor wafer, the method comprising:exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region on the major surface substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and adjacent to the first transmission region so as to substantially border thereon to the extent such that destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region sufficiently takes place, whereby resolution is improved due to the destructive interference between light beams from both vicinity sides of the boundary between the second transmission region and the first transmission region; and forming a reduced clear real image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer by a predetermined demagnification through an optical reduction projection system.
 107. A semiconductor device reduction projection exposure method according to claim 106, wherein the demagnification is substantially 1/5.
 108. A semiconductor device reduction projection exposure method according to claim 107, wherein the exposure light beam is an i-line of a Hg lamp.
 109. A semiconductor device reduction projection exposure method according to claim 106, wherein the exposure light beam is an ultraviolet light beam.
 110. A semiconductor device reduction projection exposure method according to claim 106, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
 111. A semiconductor device reduction projection exposure method according to claim 106, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 112. A semiconductor device reduction projection exposure method according to claim 111, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
 113. A semiconductor device reduction projection exposure method according to claim 107, wherein the exposure light beam is an ultraviolet light beam.
 114. A semiconductor device reduction projection exposure method according to claim 113, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 115. A semiconductor device reduction projection exposure method according to claim 114, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
 116. A semiconductor device reduction projection exposure method according to claim 107, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
 117. A semiconductor device reduction projection exposure method according to claim 116, wherein a width of the second light transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
 118. A semiconductor device reduction projection exposure method according to claim 106, wherein the exposure light beam is an i-line of a Hg lamp. 